ESD9B, SZESD9B
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
Symbol
Parameter
I PP
I
I PP
V C
V RWM
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I PP
Working Peak Reverse Voltage
I T
V C V BR V RWM I R
I R V RWM V BR V C
I T
V
I R
Maximum Reverse Leakage Current @ V RWM
V BR
I T
C
Breakdown Voltage @ I T
Test Current
Capacitance @ V R = 0 V and f = 1.0 MHz
I PP
Bi ? Directional TVS
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
V RWM
(V)
I R ( m A)
@ V RWM
V BR (V) @ I T
(Note 2)
I T
C (pF)
V C
V C (V)
Max Per 8 x 20 m s
(Note 4)
Device
ESD9B3.3ST5G
ESD9B5.0ST5G,
SZESD9B5.0ST5G
Device
Marking
2*
E
Max
3.3
5.0
Max
1.0
1.0
Min
5.0
5.8
Max
7.0
7.8
mA
1.0
1.0
Typ
15
15
Per IEC61000 ? 4 ? 2
(Note 3)
Figures 1 and 2
See Below
Figures 1 and 2
See Below
I PP = 1 A
10.5
12.5
I PP = 2 A
11.5
15.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
* Rotated 270 ° .
2. V BR is measured with a pulse test current I T at an ambient temperature of 25 ° C.
3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
4. Surge current waveforms per Figure 5.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000 ? 4 ? 2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000 ? 4 ? 2
http://onsemi.com
2
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